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Dependence of thermal stability of GaN on substrate orientation and off-cut
Tokyo Univ Agr and Technol, Japan.
Tokyo Univ Agr and Technol, Japan.
Tokyo Univ Agr and Technol, Japan.
Fuji Elect Co Ltd, Japan.
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2019 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 58, article id SCCD17Article in journal (Refereed) Published
Abstract [en]

The thermal stability of +/- c- and m-plane GaN substrates and its dependence on the m-plane GaN off-cut angle were investigated at and above 1200 degrees C at atmospheric pressure in flowing N-2 with and without added NH3. It was clarified that decomposition of the +c-plane GaN surface is promoted by the addition of NH3, while decomposition of the -c- and m-plane GaN surfaces is suppressed by added NH3. It was found that -c- and m-plane GaN substrates can be heated at 1300 degrees C with an added NH3 input partial pressure of more than 0.2 atm, which is 100 degrees C higher than for +c-plane GaN substrates. Nevertheless, decomposition of m-plane GaN substrates became noticeable with increase in the off-cut angle of the substrate. It was revealed that the decomposition was better controlled by using m-plane GaN substrates with an off-cut towards [000 (1) over bar] than towards [0001]. (C) 2019 The Japan Society of Applied Physics

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2019. Vol. 58, article id SCCD17
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URN: urn:nbn:se:liu:diva-159166DOI: 10.7567/1347-4065/ab0f14ISI: 000474911400152OAI: oai:DiVA.org:liu-159166DiVA, id: diva2:1339643
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International Workshop on Bulk Nitride Semiconductors (IWN)
Available from: 2019-07-30 Created: 2019-07-30 Last updated: 2019-07-30

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Monemar, Bo
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