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Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking
KIST, South Korea.
KIST, South Korea.
KIST, South Korea.
KIST, South Korea.
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2019 (English)In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 11, no 28, p. 25358-25368Article in journal (Refereed) Published
Abstract [en]

Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2019. Vol. 11, no 28, p. 25358-25368
Keywords [en]
organic ferroelectric memory; organic field-effect transistor; bis-FB-N-3; inverter; switchable functions
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-159246DOI: 10.1021/acsami.9b07462ISI: 000476684900056PubMedID: 31264831OAI: oai:DiVA.org:liu-159246DiVA, id: diva2:1341274
Note

Funding Agencies|Korea Institute of Science and Technology (KIST); National Research Foundation of Korea [NRF-2016R1C1B2007330]; Ministry of Trade, Industry, and Energy (MOTIE, Korea) under the Industrial Technology Innovation Program "Development of 3D-Deformable Multilayered FPCB Devices" [10051162]

Available from: 2019-08-08 Created: 2019-08-08 Last updated: 2019-08-08

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