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Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
Science Institute, University of Iceland, Iceland.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Science Institute, University of Iceland, Iceland.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, Vol. 963, p. 460-464Conference paper (Refereed)
Abstract [en]

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2019. Vol. 963, p. 460-464
Series
Materials Science Forum
Keywords [en]
Interface Traps, AlN/4H-SiC Interface, MIS Capacitors
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-160897DOI: 10.4028/www.scientific.net/MSF.963.460OAI: oai:DiVA.org:liu-160897DiVA, id: diva2:1360626
Available from: 2019-10-14 Created: 2019-10-14 Last updated: 2019-10-14

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Chen, J. T.Karhu, RobinHassan, JawadSveinbjörnsson, Einar Ö.
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