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Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Department of Electronic Science and Engineering, Kyoto University, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2017 (English)In: Silicon Carbide and Related Materials 2016, Trans Tech Publications Ltd , 2017, Vol. 897, p. 238-241Conference paper, Published paper (Refereed)
Abstract [en]

In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm-3 to mid 1E18 cm-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth conditions except the doping level on comparable substrates, in order to minimize the influence of other parameters than the n-type doping level. We have found a drastic decrease in carrier lifetime with increasing n-type doping level. Epilayers were further characterized with low temperature photoluminescence and deep level transient spectroscopy.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2017. Vol. 897, p. 238-241
Series
Materials Science Forum, ISSN 1662-9752
Keywords [en]
Auger Recombination, Carrier Lifetime, Epitaxial Growth, Chemical Vapor Deposition (CVD), Photoluminescence
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-160906DOI: 10.4028/www.scientific.net/MSF.897.238Scopus ID: 2-s2.0-85020038744OAI: oai:DiVA.org:liu-160906DiVA, id: diva2:1360821
Conference
11th European Conference on Silicone Carbide & Related Materials, Halkidiki, Greece, 25-29 September, 2016
Available from: 2019-10-14 Created: 2019-10-14 Last updated: 2019-10-24Bibliographically approved

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Lilja, LouiseFarkas, Ildikoul-Hassan, JawadJanzén, ErikBergman, Peder

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Lilja, LouiseFarkas, Ildikoul-Hassan, JawadJanzén, ErikBergman, Peder
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  • apa
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