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Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
Université de Lyon, INSA-Lyon, Ampere UMR5005, Villeurbanne, France.
Université de Lyon, INSA-Lyon, Ampere UMR5005, Villeurbanne, France.
Centro Nacional de Microelectrónica, Campus UAB, Bellaterra, Spain.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2009 (English)In: Silicon Carbide and Related Materials 2008, Trans Tech Publications Ltd , 2009, Vol. 615, p. 703-706Conference paper, Published paper (Refereed)
Abstract [en]

This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2009. Vol. 615, p. 703-706
Series
Materials Science Forum
Keywords [en]
Open Circuit Voltage Decay, Carrier Lifetime Temperature-Dependence, Bipolar Diode, OCVD
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-160910DOI: 10.4028/www.scientific.net/MSF.615-617.703Scopus ID: 2-s2.0-79251541761OAI: oai:DiVA.org:liu-160910DiVA, id: diva2:1360896
Conference
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008. Barcelona, Spain, 7-11 September, 2008
Available from: 2019-10-14 Created: 2019-10-14 Last updated: 2019-10-24Bibliographically approved

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Hassan, Jawad

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
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  • Other style
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