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(Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing
University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology, N-0316 Oslo, NORWAY .
University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology, N-0316 Oslo, NORWAY .
University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology, N-0316 Oslo, NORWAY .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2018 (English)In: ECS Transactions, ISSN 1938-5862, E-ISSN 1938-6737, ECS Transactions, Vol. 86, no 12, p. 91-97Article in journal (Refereed) Published
Abstract [en]

The carbon vacancy (VC) is perhaps the most prominent point defect in silicon carbide (SiC) and it is an efficient charge carrier lifetime killer in high-purity epitaxial layers of 4H-SiC. The VC concentration needs to be controlled and minimized for optimum materials and device performance, and an approach based on post-growth thermal processing under C-rich ambient conditions is presented. It utilizes thermodynamic equilibration and after heat treatment at 1500 °C for 1 h, the VC concentration is shown to be reduced by a factor ~25 relative to that in as-grown state-of-the-art epi-layers. Concurrently, a considerable enhancement of the carrier lifetime occurs throughout the whole of >40 µm thick epi-layers.

Place, publisher, year, edition, pages
Electrochemical Society, 2018. Vol. 86, no 12, p. 91-97
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-160924DOI: 10.1149/08612.0091ecstScopus ID: 2-s2.0-85058420747OAI: oai:DiVA.org:liu-160924DiVA, id: diva2:1360999
Available from: 2019-10-15 Created: 2019-10-15 Last updated: 2019-10-21Bibliographically approved

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Publisher's full textScopushttp://ecst.ecsdl.org/content/86/12/91.abstract

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ul-Hassan, JawadBergman, Peder

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