(Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal ProcessingShow others and affiliations
2018 (English)In: / [ed] Dudley, M; Bakowski, M; Shenai, K; Ohtani, N; Raghothamachar, B, Electrochemical Society, 2018, Vol. 86, no 12, p. 91-97Conference paper, Published paper (Refereed)
Abstract [en]
The carbon vacancy (VC) is perhaps the most prominent point defect in silicon carbide (SiC) and it is an efficient charge carrier lifetime killer in high-purity epitaxial layers of 4H-SiC. The VC concentration needs to be controlled and minimized for optimum materials and device performance, and an approach based on post-growth thermal processing under C-rich ambient conditions is presented. It utilizes thermodynamic equilibration and after heat treatment at 1500 °C for 1 h, the VC concentration is shown to be reduced by a factor ~25 relative to that in as-grown state-of-the-art epi-layers. Concurrently, a considerable enhancement of the carrier lifetime occurs throughout the whole of >40 µm thick epi-layers.
Place, publisher, year, edition, pages
Electrochemical Society, 2018. Vol. 86, no 12, p. 91-97
Series
ECS Transactions, ISSN 1938-5862, E-ISSN 1938-6737
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-160924DOI: 10.1149/08612.0091ecstISI: 000542655800011Scopus ID: 2-s2.0-85058420747ISBN: 978-1-60768-859-4 (print)OAI: oai:DiVA.org:liu-160924DiVA, id: diva2:1360999
Conference
Symposium on Gallium Nitride and Silicon Carbide Power Technologies,Cancun, Mexico, 2018
Note
Funding agencies: Financial support was kindly provided by the Research Council of Norway and the University of Oslo through the frontier research project FUNDAMeNT (no. 251131 FriPro ToppForsk program) and the Norwegian Micro-and Nanofabrication Facility (NORFAB 245963). UNINETT Sigma2 and the Department for Research Computing at University of Oslo are acknowledged for providing computational resources and support under the projects NN9180K and NN9136K
2019-10-152019-10-152020-11-07Bibliographically approved