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X-ray photoelectron spectroscopy studies of Ti1-xAlxN (0 <= x <= 0.83) high-temperature oxidation: The crucial role of Al concentration
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-4898-5115
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2837-3656
Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2286-5588
2019 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 374, p. 923-934Article in journal (Refereed) Published
Abstract [en]

The resistance to high-temperature oxidation of Ti1-xAlxN films determines performance in numerous applications including coated cutting tools. Here, we present a comprehensive study covering Ti1-xAlxN films with 0 amp;lt;= x amp;lt;= 0.83 annealed in air for 1 h at temperatures T-a ranging from 500 to 800 degrees C. Layers are grown by the combination of high-power impulse and dc magnetron sputtering (HiPIMS/DCMS) in Ar/N-2 atmospheres. We use X-ray photoelectron spectroscopy to study the evolution of surface chemistry and to reconstruct elemental distribution profiles. No dependence of oxidation process on the phase content, average grain size, or preferred orientation could be confirmed, to the accuracy offered by the employed X-ray diffraction techniques. Instead, our results show that, under the applied test conditions, the Ti1-xAlxN oxidation scenario depends on both x and T-a. The common notion of double-layer Al2O3/TiO2 oxide formation is valid only in a limited region of the x-T-a parameter space (Type-1 oxidation). Outside this range, a mixed and non-conformal Al2O3-TiO2 layer forms, characterized by larger oxide thickness (Type-2 oxidation). The clear distinction between different Ti1-xAlxN oxidation scenarios revealed here is essential for numerous applications that can benefit from optimizing the Al content, while targeting a given operational temperature range.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2019. Vol. 374, p. 923-934
Keywords [en]
TiAIN; HIPIMS; Oxidation; XPS; HPPMS; Magnetron sputtering
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-161136DOI: 10.1016/j.surfcoat.2019.06.081ISI: 000486360000091OAI: oai:DiVA.org:liu-161136DiVA, id: diva2:1365797
Note

Funding Agencies|Knut and Alice Wallenberg Foundation Scholar Grant [KAW2016.0358]; Competence Center Functional Nanoscale Materials (FunMat-II) VINNOVA grantVinnova [2016-05156]; Swedish Research Council VRSwedish Research Council [2018-03957]; VINNOVAVinnova [2018-04290]; Aforsk Foundation [16-359]; Carl Tryggers Stiftelse [CTS 17:166]

Available from: 2019-10-25 Created: 2019-10-25 Last updated: 2019-10-25

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Greczynski, GrzegorzHultman, LarsOdén, Magnus
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