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Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device
Univ Stuttgart, Germany.
Univ Stuttgart, Germany.
Moscow Inst Phys and Technol, Russia.
Moscow Inst Phys and Technol, Russia.
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2019 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, no 10, p. 7173-7180Article in journal (Refereed) Published
Abstract [en]

Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the color center in an integrated silicon carbide optoelectronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active color centers for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2019. Vol. 19, no 10, p. 7173-7180
Keywords [en]
materials science; nanotechnology; semiconductors; multidisciplinary
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-161400DOI: 10.1021/acs.nanolett.9b02774ISI: 000490353500060PubMedID: 31532999OAI: oai:DiVA.org:liu-161400DiVA, id: diva2:1367453
Note

Funding Agencies|Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation [8.9898.2017/6.7]; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-57-12008]; Russian FederationRussian Federation [MK-2602.2017.9]; Baden-Wurttemberg Stiftung Programm: Internationale Spitzenforschung; ERC SMel; BMBF BRAINQSENSFederal Ministry of Education & Research (BMBF); Korea Institute of Science and Technology institutional program [2E29580, 2E27110]; Swedish Research CouncilSwedish Research Council [VR 2016-04068, VR 201605362]; Carl Tryggers Stiftelse for Vetenskaplig Forskning [CTS 15:339]; Swedish Energy AgencySwedish Energy Agency [43611-1]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2018.0071]; National Quantum Technology Program from the National Office of Research, Development and Innovation in Hungary [2017-1.2.1-NKP-2017-00001]; National Excellence Program from the National Office of Research, Development and Innovation in Hungary [KKP129866]; EU QuantERA Nanospin project from the National Office of Research, Development and Innovation in Hungary [127902]; Engineering and Physical Sciences Research CouncilEngineering & Physical Sciences Research Council (EPSRC) [EP/P019803/1, EP/S000550/1]; Networked Quantum Information Technologies Hub (Oxford); JSPS KAKENHIMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of ScienceGrants-in-Aid for Scientific Research (KAKENHI) [17H01056, 18H03770]; Carnegie Trust for Scotland [RIG007503]

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2019-11-04

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