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A simple model for non-saturated reactive sputtering processes
Uppsala Univ, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-4898-5115
Uppsala Univ, Sweden.
2019 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 688, article id 137413Article in journal (Refereed) Published
Abstract [en]

Reactive sputtering processes are quite complex processes and therefore difficult to understand in detail. However, a number of attempts to clearify the behaviour of reactive sputtering of oxides and nitrides have been made. Several process modelling results for such processes have been published that reasonable well mirrors the actual experimental findings. All of these models indicate that the processes normally exhibit hysteresis effects and that the oxides/nitrides will saturate at the stoichiometric compound values. We therefore call these processes saturated reactive sputtering processes. Carrying out reactive sputtering in a hydrocarbon gas like CH4 instead of in oxygen or nitrogen cannot be described with the previously suggested models for oxide or nitride formations. Decomposition of the CH4 molecule in the plasma may result both in carbide formation with the target metal as well as plasma deposited carbon. Depending on the supply of the CH4 the deposited film composition may vary from 0 to 100% of carbon. In the extreme case of very high supply of CH4 a pure carbon film will be deposited. We expect that similar behaviour will be found when carrying out reactive sputtering in other solid material containing gases like e.g. silane or diborane. We have chosen to call such processes non-saturated reactive sputtering processes. In order to understand the behaviour of non-saturated reactive sputtering processes we have developed a new model that enables the user to find the response to individual processing parameters and thus obtain a tool for process optimization. In order to limit the number of parameters our model is outlined for reactive sputtering of Ti in a mixture of argon and CH4. In this article we report that the simulation results reasonable well correlate with our experimental findings.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2019. Vol. 688, article id 137413
Keywords [en]
Thin film; Deposition; Reactive sputtering; PVD; Titanium carbide; Process modelling; Simulation
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:liu:diva-160973DOI: 10.1016/j.tsf.2019.137413ISI: 000485256500004OAI: oai:DiVA.org:liu-160973DiVA, id: diva2:1370239
Note

Funding Agencies|Carl Tryggers Foundation [CTS 17:336, CTS 15:219, CTS 14:431]; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW2016.0358]; Swedish Research Council VR Grant [2018-03957]; VINNOVA GrantVinnova [2018-04290]; Carl Tryggers Stiftelse [CTS 17:166]

Available from: 2019-11-14 Created: 2019-11-14 Last updated: 2019-11-14

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