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Emission Properties of GaN Planar Hexagonal Microcavities
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2597-3322
St Petersburg Acad Univ, Russia.
ITMO Univ, Russia; Ioffe Inst, Russia.
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2020 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, article id 1900894Article in journal (Refereed) Epub ahead of print
Abstract [en]

Fabrication of microcavities based on III-nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of periods, at the same time keeping a good precision in terms of thickness and composition of the alloy. A planar design for GaN microresonators supporting whispering gallery modes is suggested. GaN hexagonal microstructures are fabricated by selective-area metalorganic vapor phase epitaxy using focused ion beam for mask patterning. Low-temperature cathodoluminescence spectra measured with a high spatial resolution demonstrate two dominant emission lines in the near bandgap region. These lines merge at room temperature into a broad emission band peaking at approximate to 3.3 eV, which is shifted toward lower energies compared with the reference excitonic spectrum measured for the GaN layer. A numerical analysis of exciton-polariton modes shows that some strongly localized cavity modes can have high Purcell coefficients and can strongly interact with the GaN exciton.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2020. article id 1900894
Keywords [en]
cavity modes; GaN hexagonal microstructures; planar microcavities; Purcell factor; selective area epitaxy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-163026DOI: 10.1002/pssa.201900894ISI: 000504787900001OAI: oai:DiVA.org:liu-163026DiVA, id: diva2:1384279
Note

Funding Agencies|Russian Science FoundationRussian Science Foundation (RSF) [16-12-10503]; Swedish Research Council (Vetenskapsradet)Swedish Research Council; Swedish Energy Agency (Energimyndigheten)Swedish Energy Agency

Available from: 2020-01-09 Created: 2020-01-09 Last updated: 2020-01-09

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