Emission Properties of GaN Planar Hexagonal MicrocavitiesShow others and affiliations
2020 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 217, no 14, article id 1900894Article in journal (Refereed) Published
Abstract [en]
Fabrication of microcavities based on III-nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of periods, at the same time keeping a good precision in terms of thickness and composition of the alloy. A planar design for GaN microresonators supporting whispering gallery modes is suggested. GaN hexagonal microstructures are fabricated by selective-area metalorganic vapor phase epitaxy using focused ion beam for mask patterning. Low-temperature cathodoluminescence spectra measured with a high spatial resolution demonstrate two dominant emission lines in the near bandgap region. These lines merge at room temperature into a broad emission band peaking at approximate to 3.3 eV, which is shifted toward lower energies compared with the reference excitonic spectrum measured for the GaN layer. A numerical analysis of exciton-polariton modes shows that some strongly localized cavity modes can have high Purcell coefficients and can strongly interact with the GaN exciton.
Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2020. Vol. 217, no 14, article id 1900894
Keywords [en]
cavity modes; GaN hexagonal microstructures; planar microcavities; Purcell factor; selective area epitaxy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-163026DOI: 10.1002/pssa.201900894ISI: 000504787900001OAI: oai:DiVA.org:liu-163026DiVA, id: diva2:1384279
Note
Funding Agencies|Russian Science FoundationRussian Science Foundation (RSF) [16-12-10503]; Swedish Research Council (Vetenskapsradet)Swedish Research Council; Swedish Energy Agency (Energimyndigheten)Swedish Energy Agency
2020-01-092020-01-092022-10-24