Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gasShow others and affiliations
2020 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 545, article id 125730Article in journal (Refereed) Published
Abstract [en]
n/a
Place, publisher, year, edition, pages
ELSEVIER , 2020. Vol. 545, article id 125730
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-167632DOI: 10.1016/j.jcrysgro.2020.125730ISI: 000541158700008OAI: oai:DiVA.org:liu-167632DiVA, id: diva2:1454774
Note
Funding Agencies|Japan Society for the Promotion of ScienceMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [15H03555]; Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Japan
2020-07-202020-07-202020-07-20