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Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas
Tokuyama Corp, Japan; Tokyo Univ Agr and Technol, Japan.
Tokyo Univ Agr and Technol, Japan.
Tokyo Univ Agr and Technol, Japan.
Tokuyama Corp, Japan.
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2020 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 545, article id 125730Article in journal (Refereed) Published
Abstract [en]

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ELSEVIER , 2020. Vol. 545, article id 125730
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Chemical Sciences
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URN: urn:nbn:se:liu:diva-167632DOI: 10.1016/j.jcrysgro.2020.125730ISI: 000541158700008OAI: oai:DiVA.org:liu-167632DiVA, id: diva2:1454774
Note

Funding Agencies|Japan Society for the Promotion of ScienceMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [15H03555]; Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Japan

Available from: 2020-07-20 Created: 2020-07-20 Last updated: 2020-07-20

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