Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon CarbideShow others and affiliations
2020 (English)In: 2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2020Conference paper, Published paper (Refereed)
Abstract [en]
We present the DC Stark tuning of single Silicon Vacancies in SiC. We demonstrate static tuning across 200 GHz, exceeding the inhomogenous broadening, and dynamic tuning on timescales shorter than the optical decay rate. (C) 2020 The Author(s)
Place, publisher, year, edition, pages
IEEE , 2020.
Series
Conference on Lasers and Electro-Optics, ISSN 2160-9020
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:liu:diva-173862ISI: 000612090001240ISBN: 978-1-943580-76-7 (electronic)OAI: oai:DiVA.org:liu-173862DiVA, id: diva2:1535619
Conference
Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, may 10-15, 2020
2021-03-092021-03-092021-03-09