Improved Photovoltaic Characteristics of Inverted Polymer Solar Cells With Indium-Doped ZnO at Low-Temperature Annealing as Electron-Transport Layer
2021 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 11, no 2, p. 374-378Article in journal (Refereed) Published
Abstract [en]
For inverted solar cells, UV-socking is usually necessary to improve the photovoltaic performance of the devices. In this article, inverted polymer solar cells with pure and indium-doped ZnO as an electron transport layer were fabricated, and their properties were investigated. We found that the In-doped ZnO-based device has a high power conversion efficiency of 5.99%, and a nearly 40% improvement in comparison with the pure ZnO-based device without the UV treatment. Those investigations of X-ray diffraction, Photoluminescence, X-ray photoelectron spectroscopy, and ultraviolet photoelectron spectra show that the doping of indium into the lattice of ZnO can decrease defect states and increase the work function, leading to more efficient electron extraction, and consequently, an enhancement of photovoltaic performance of the device.
Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2021. Vol. 11, no 2, p. 374-378
Keywords [en]
Zinc oxide; II-VI semiconductor materials; Photovoltaic cells; Polymers; Photovoltaic systems; Indium; Art; Indium doped; inverted device; s-shape; ZnO
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-174369DOI: 10.1109/JPHOTOV.2021.3051157ISI: 000621413300017OAI: oai:DiVA.org:liu-174369DiVA, id: diva2:1538714
Note
Funding Agencies|National Nature Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11304045, 11874124, 11574058]
2021-03-212021-03-212021-03-21