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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
Friedrich Alexander Univ Erlangen Nurnberg FAU, Germany; Univ Stuttgart, Germany; Univ Stuttgart, Germany.
Univ Stuttgart, Germany; Univ Stuttgart, Germany.
Univ Stuttgart, Germany; Univ Stuttgart, Germany.
Univ Stuttgart, Germany; Univ Stuttgart, Germany.
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2021 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 118, no 14, article id 144003Article in journal (Refereed) Published
Abstract [en]

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication, and sensing. Realizing scalability and increasing application complexity require entangling multiple individual systems, e.g., via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centers in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of approximate to 0.43 mu m - 3. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction-limited excitation spots, for which we introduce simplified schemes for the generation of computationally relevant Greenberger-Horne-Zeilinger and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2021. Vol. 118, no 14, article id 144003
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:liu:diva-175432DOI: 10.1063/5.0046563ISI: 000637396200002OAI: oai:DiVA.org:liu-175432DiVA, id: diva2:1549009
Note

Funding Agencies|Carl-Zeiss-Stiftung; EU-FET Flagship on Quantum Technologies through the project ASTERIQS [820394]; EU-FET Flagship on Quantum Technologies through the project QIA [820445]; German Federal Ministry of Education and Research (BMBF)Federal Ministry of Education & Research (BMBF) [16KIS0867]; European Research Council (ERC) grant SMelEuropean Research Council (ERC); European Commission Marie Curie ETN "QuSCo" [765267]; Max Planck SocietyMax Planck SocietyFoundation CELLEX; Humboldt FoundationAlexander von Humboldt Foundation; German Research FoundationGerman Research Foundation (DFG) [SPP 1601]; JSPS KAKENHIMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of ScienceGrants-in-Aid for Scientific Research (KAKENHI) [18H03770, 20H00355]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2016-04068, 2020-05444]; Swedish Energy AgencySwedish Energy Agency [43611-1]; EU H2020 project QuanTELCO [862721]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2018.0071]

Available from: 2021-05-04 Created: 2021-05-04 Last updated: 2021-05-04Bibliographically approved

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