Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, no 11, 113513- p.Article in journal (Refereed) Published
AlGaN/AlN/GaN high electron mobility transistor heterostructures grown by metal-organic chemical vapor deposition have been studied by temperature dependent time-resolved photoluminescence. The AlGaN-related emission is found to be sensitive to the excitation power and to the built-in internal electric field. In addition, this emission shows a shift to higher energy with the reduction in the excitation density, which is rather unusual. Using a self-consistent calculation of the band potential profile, we suggest a recombination mechanism for the AlGaN-related emission involving electrons confined in the triangular AlGaN quantum well and holes weakly localized due to potential fluctuations.
Place, publisher, year, edition, pages
2008. Vol. 104, no 11, 113513- p.
IdentifiersURN: urn:nbn:se:liu:diva-16511DOI: 10.1063/1.3028687OAI: oai:DiVA.org:liu-16511DiVA: diva2:158117
Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Gueorguie, Bo Monemar, Lars Hultman and Erik Janzén , Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate, 2008, JOURNAL OF APPLIED PHYSICS, (104), 11, 113513.
Copyright: American Institute of Physics