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Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, no 11, 113513- p.Article in journal (Refereed) Published
Abstract [en]

AlGaN/AlN/GaN high electron mobility transistor heterostructures grown by metal-organic chemical vapor deposition have been studied by temperature dependent time-resolved photoluminescence. The AlGaN-related emission is found to be sensitive to the excitation power and to the built-in internal electric field. In addition, this emission shows a shift to higher energy with the reduction in the excitation density, which is rather unusual. Using a self-consistent calculation of the band potential profile, we suggest a recombination mechanism for the AlGaN-related emission involving electrons confined in the triangular AlGaN quantum well and holes weakly localized due to potential fluctuations.

Place, publisher, year, edition, pages
2008. Vol. 104, no 11, 113513- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-16511DOI: 10.1063/1.3028687OAI: oai:DiVA.org:liu-16511DiVA: diva2:158117
Note
Original Publication: Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Gueorguie, Bo Monemar, Lars Hultman and Erik Janzén , Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate, 2008, JOURNAL OF APPLIED PHYSICS, (104), 11, 113513. http://dx.doi.org/10.1063/1.3028687 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2009-02-05 Created: 2009-01-30 Last updated: 2016-08-31Bibliographically approved

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Pozina, GaliaHemmingsson, CarlForsberg, UrbanLundskog, AndersKakanakova-Georgieva, AneliaMonemar, BoHultman, LarsJanzén, Erik

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