Influence of exposure to 980 nm laser radiation on the luminescence of Si: Er/O light-emitting diodes
2008 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979 , Vol. 104, no 12, 123110- p.Article in journal (Refereed) Published
Erbium (Er) codoping with oxygen (O) in Si is a well-known method for producing electroluminescent material radiating at 1.54 mu m through a 4f shell transition of Er3+ ions. In this work the influence of exposure to 980 nm radiation on the electroluminescence (EL) of reverse biased Si:Er/O light-emitting diodes (LEDs), which give a strong room temperature 1.54 mu m intensity, is presented and discussed. All the device layers, including Er/O doped Si sandwiched between two Si0.82Ge0.18 layers, have been grown on silicon on insulator substrates using molecular beam epitaxy and processed to fabricate edge emitting Si:Er/O waveguide LEDs. Electromagnetic mode confinement simulations have been performed to optimize the layer parameters for waveguiding. The temperature dependence of the 1.54 mu m EL intensity exhibits an abnormal temperature quenching with a peak near -30 degrees C, and at -160 degrees C it has decreased by a factor of 5. However, irradiating the devices with a 980 nm laser gives an enhancement of the 1.54 mu m EL intensity, which is more dramatic at low temperatures (e.g., -200 degrees C) where the quenched EL signal is increased up to almost the same level as at room temperature. The enhancement of the EL intensity is attributed to the photocurrent generated by the 980 nm laser, reducing the detrimental avalanche current.
Place, publisher, year, edition, pages
2008. Vol. 104, no 12, 123110- p.
electroluminescence, electroluminescent devices, elemental semiconductors, erbium, Ge-Si alloys, laser beam effects, light emitting diodes, optical waveguide components, oxygen, photoconductivity, radiation quenching, semiconductor doping, semiconductor epitaxial layers, silicon, silicon-on-insulator
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-16512DOI: 10.1063/1.3050316OAI: oai:DiVA.org:liu-16512DiVA: diva2:158118
Amir Karim, Chun-Xia Du and Göran Hansson, Influence of exposure to 980 nm laser radiation on the luminescence of Si: Er/O light-emitting diodes, 2008, JOURNAL OF APPLIED PHYSICS, (104), 12, 123110.
Copyright: American Institute of Physics