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Preparation of Functional Oxide Perovskites: A Study on the Growth-Microstructure-Property Relationships of(N a,K)NbOx Thin Films
Linköping University, Department of Physics, Measurement Technology, Biology and Chemistry. Linköping University, The Institute of Technology.
2003 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Sodium-potassium niobate is a material with ferroelectric and piezoelectric properties that has been known since 1954. Recently, perovskite structured ferroelectric thin films have gained a lot of attention due to their wide area of potential applications, including non-volatile memories, infrared sensors, optical switches, and ultrasonic transducers. Perovskite-structured thin films of (Na,K)NbOx (hereafter NKN) show high piezoelectric and dielectric constants, low losses (tan δ), and tunable properties, which makes them particularly interesting for device applications.

The possibility of fabricating high electrical performance NKN films at low growth temperatures is of high technological importance. In this thesis, we investigated the feasibility of using reactive rf magnetron sputtering to obtain high-quality dielectric NKN films at low growth temperatures.

Specifically, the aims of this work were (1) to obtain a better understanding of the relation between the process conditions and the resulting chemical compositions and microstructures of NKN films, (2) to investigate how their physical properties depend on the composition and the microstructure, and (3) to optimize the synthesis for obtaining films with improved electrical and mechanical properties.

Our results can be summarized as follows: High oxygen partial pressures avoid oxygen deficient films. On the other hand, energetic oxygen ions or neutrals cause an etching of the film surface, changing the metal stoichiometry of the films. Changing the substrate temperature has no effect on the film stoichiometry in the temperature range investigated here. However, increasing the substrate temperature results in larger grain sizes and the precipitation of an additional crystal phase. Substituting Si/SiO2 by Pt80Ir20 substrates allows to obtain crystalline NKN films already at temperatures as low as 300°C.

Furthermore, it was found that the mechanical and electrical performance of the films area strong function of their microstructure and chemical composition: The mechanical properties such as the Young's modulus and the hardness improve by improving the crystalline quality of the NKN films, and the highest dielectric constants are obtained for stoichiometric films.

Place, publisher, year, edition, pages
Linköping: Linköping University , 2003. , p. 47
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 844
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:liu:diva-179076Libris ID: 9145934ISBN: 9173737437 (print)OAI: oai:DiVA.org:liu-179076DiVA, id: diva2:1592974
Public defence
2003-10-30, hörsal Planck, Fysikhuset, Linköpings universitet, Linköping, 10:15
Opponent
Note

All or some of the partial works included in the dissertation are not registered in DIVA and therefore not linked in this post.

Available from: 2021-09-10 Created: 2021-09-10 Last updated: 2023-03-01Bibliographically approved
List of papers
1. Low temperature growth and characterization of (Na,K)NbOx thin films
Open this publication in new window or tab >>Low temperature growth and characterization of (Na,K)NbOx thin films
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2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 254, no 3-4, p. 400-404Article in journal (Refereed) Published
Abstract [en]

Thin (Na,K)NbOx perovskite films (NKN) have been deposited on SiO2/Si(0 0 1) substrates at low temperatures, from 350°C to 550°C, by RF magnetron sputtering. The effects of substrate temperature on microstructure, electrical-, and mechanical properties of the NKN films have been studied. X-ray diffraction analysis revealed that films deposited at temperatures in the range of 450–550°C were crystalline, growing as a single phase, with a preferred orientation of (0 0 1). Films deposited at 350°C, were shown to be amorphous. The growth temperature had a strong influence on the electrical properties of the NKN films and the relative dielectric constants of the obtained films were in between 38 and 78. Variations of the mechanical properties of the NKN films were observed for different substrate temperatures: The elastic moduli and the hardness values ranged from 205±26 to 93±29 GPa, and from 12±2 to around 2 GPa, for films deposited at 550°C and 450°C, respectively.

Keywords
A1. Characterization; A3. Physical vapor deposition processes; B1. Niobates; B2. Dielectric materials
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-46555 (URN)10.1016/S0022-0248(03)01184-9 (DOI)000183468100016 ()
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2021-09-10
2. Microstructure/dielectric property relationship of low temperature synthesised (Na,K)NbOx thin films
Open this publication in new window or tab >>Microstructure/dielectric property relationship of low temperature synthesised (Na,K)NbOx thin films
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2004 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 262, no 1-4, p. 322-326Article in journal (Refereed) Published
Abstract [en]

Thin films of (Na,K)NbOx (NKN) were grown by reactive RF magnetron sputtering on polycrystalline Pt80Ir20 substrates, at relatively low growth temperatures between 300°C and 450°C. The results show that the electrical performance and the microstructure of the films are a strong function of the substrate temperature. X-ray diffraction of films grown up to 400°C revealed the formation of only one crystalline NKN-phase with a preferred (0 0 2)-orientation. However, a mixed orientation together with a secondary, paraelectric potassium niobate phase, were observed for NKN films deposited at 450°C. The differences in the microstructure explains the variations in the dielectric constants and losses: The single phase NKN films displayed a dielectric constant and a dielectric loss of 506 and 0.011, respectively, while the films with mixed phases exhibited values of 475 and 0.022, respectively. The possibility of fabricating NKN films with relatively high dielectric properties at low growth temperatures, as demonstrated here, is of high technological importance.

Keywords
A1. Characterization, A3. Physical vapor deposition processes, B1. Niobates, B2. Dielectric materials
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-45820 (URN)10.1016/j.jcrysgro.2003.10.035 (DOI)000189098700050 ()
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2021-09-10

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Kugler, Veronika Mozhdeh

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