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Enhancement of the Basal-plane Stacking Fault Emission in GaN Planar Nanowire Microcavity
ITMO Univ, Russia.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
ITMO Univ, Russia.
Russian Acad Sci, Russia; Ioffe Inst, Russia.
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2022 (English)In: JETP Letters: Journal of Experimental And Theoretical Physics Letters, ISSN 0021-3640, E-ISSN 1090-6487, Vol. 115, p. 574-580Article in journal (Refereed) Published
Abstract [en]

We study and compare optical microcavities formed by GaN planar nanowires. Nanostructures with structural defects such as stacking faults and without defects are considered. The behavior of an exciton localized in a stacking fault is considered. Different behavior of the photoluminescence intensity and the photoluminescence decay time is observed for the cases under consideration. Theoretical calculations show the localization of the field at the ends of the structure.

Place, publisher, year, edition, pages
MAIK NAUKA/INTERPERIODICA/SPRINGER , 2022. Vol. 115, p. 574-580
National Category
Astronomy, Astrophysics and Cosmology
Identifiers
URN: urn:nbn:se:liu:diva-185382DOI: 10.1134/S0021364022100605ISI: 000796329700001OAI: oai:DiVA.org:liu-185382DiVA, id: diva2:1662662
Note

Funding Agencies|Russian Science Foundation [21-12-00304]

Available from: 2022-06-01 Created: 2022-06-01 Last updated: 2023-02-21Bibliographically approved

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