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Comparison of experimental results with theoretical models for the temperature dependence of the band gap of AlxGa1-xN epilayers
NMU, South Africa.
Univ Witwatersrand, South Africa.
Univ Stellenbosch, South Africa.
NMU, South Africa.
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2022 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 33, p. 22492-22498Article in journal (Refereed) Published
Abstract [en]

The band gap energies AlxGa1-xN epilayers prepared on two different substrates were assessed using Fourier Transform Infrared (FTIR) reflectance spectroscopy, photoluminescence (PL) and scanning electron microscopy electron dispersive spectroscopy (SEM-EDS). The results were compared to various theoretical formulae to calculate the band gap, and deviations elucidated.

Place, publisher, year, edition, pages
SPRINGER , 2022. Vol. 33, p. 22492-22498
National Category
Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-188581DOI: 10.1007/s10854-022-09027-6ISI: 000852910700001OAI: oai:DiVA.org:liu-188581DiVA, id: diva2:1696799
Note

Funding Agencies|National Research Foundation (NRF)

Available from: 2022-09-19 Created: 2022-09-19 Last updated: 2023-03-21Bibliographically approved

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Henry, Anne

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