The band gap energies AlxGa1-xN epilayers prepared on two different substrates were assessed using Fourier Transform Infrared (FTIR) reflectance spectroscopy, photoluminescence (PL) and scanning electron microscopy electron dispersive spectroscopy (SEM-EDS). The results were compared to various theoretical formulae to calculate the band gap, and deviations elucidated.
Funding Agencies|National Research Foundation (NRF)