Effect of Ambient on 4H-SiC Bulk Crystals grown by Sublimation
2003 (English)In: Materials Science Forum, Vols. 433-436 / [ed] Peder Bergman and Erik Janzén, 2003, Vol. 433-436, 75-78 p.Conference paper (Refereed)
Sublimation bulk growth in vacuum using graphite crucibles and such with tantalum shielding of the crucible walls has been studied. Residual nitrogen, aluminum and boron doping in the material grown in vacuum is presented. Activation energies of growth rate in respect to growth temperature in vacuum are deduced. The estimated values are 21 kcallmole for growth temperatures below 2075°C and 128 kcal/mole in the range of growth temperatures between 2075°C and 2275°C. Cathodoluminescence spectra taken from samples grown in the graphite crucible in absence of tantalum under different pressures show nitrogen-alurninum DAP transition and strong luminescence from deep boron. This is not the case for samples grown in the tantalum environment.
Place, publisher, year, edition, pages
2003. Vol. 433-436, 75-78 p.
Bulk Growth, Doping, Boron, Tantalum, Cathodoluminescence
IdentifiersURN: urn:nbn:se:liu:diva-12782DOI: 10.4028/www.scientific.net/MSF.433-436.75OAI: oai:DiVA.org:liu-12782DiVA: diva2:17046
ECSCRM 2002. Linköping, Sweden, September 1-5, 2002