Structural instabilities in growth of SiC crystals
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 275, no 1-2, e461-e466 p.Article in journal (Refereed) Published
Misoriented grains, which may occur on the growth front of 6H–SiC boules have been studied in relation to their appearance during sublimation growth. The effect was obtained by applying growth conditions at which the source powder was gradually approaching graphitisation and the vapour becoming C-rich. The high off-orientation of the grains is demonstrated through etching in molten KOH and transmission light optical microscopy. Micropipes propagating in the single crystal area and facing the misoriented grain have been studied, and it is shown that they may either be terminated at the grain or their propagation is altered to be parallel with the grain boundary. It has been found that the polytype of the grains may switch from 6H to 4H, which is explained by the change of the Si/C ratio in the vapour.
Place, publisher, year, edition, pages
2005. Vol. 275, no 1-2, e461-e466 p.
Crystal morphology; Volume defects; Growth from vapor; Single crystal growth; Semiconductor silicon compounds
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-12783DOI: 10.1016/j.jcrysgro.2004.11.020OAI: oai:DiVA.org:liu-12783DiVA: diva2:17047