Effect of boron on the resistivity of compensated 4H-SiC
2003 (English)In: Journal of electronic materials, ISSN 0361-5235 (print) 1543-186X (online), Vol. 32, no 5, 452-457 p.Article in journal (Refereed) Published
High-resistivity 4H-SiC samples grown by sublimation with a high growth rate are studied. The measurements show resistivity values up to a high of 104 Ωcm. The secondary ion mass spectroscopy (SIMS) results revealed a presence of only common trace impurities such as nitrogen, aluminum, and boron. To understand the compensation mechanism in these samples, capacitance deep-level transient spectroscopy (DLTS) on the p-type epilayers has been performed. By correlation between the growth conditions and SIMS results, we apply a model in which it is proposed that an isolated carbon vacancy donorlike level is a possible candidate responsible for compensation of the shallow acceptors in p-type 4H-SiC. A relation between cathodoluminescence (CL) and DLTS data is taken into account to support the model.
Place, publisher, year, edition, pages
2003. Vol. 32, no 5, 452-457 p.
SiC sublimation epitaxy, DLTS, compensation, deep levels, carbon vacancy, high resistivity, semi-insulating
IdentifiersURN: urn:nbn:se:liu:diva-12784DOI: 10.1007/s11664-003-0177-0OAI: oai:DiVA.org:liu-12784DiVA: diva2:17048