High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target
2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 4, 1731-1736 p.Article in journal (Refereed) Published
We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with dc magnetron sputtering under comparable conditions were rough and porous. Due to the high degree of ionization of the sputtered species obtained in HIPIMS, it is possible to control the film composition, in particular the C content, by tuning the substrate inclination angle, the Ar process pressure, and the bias voltage.
Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi , 2006. Vol. 515, no 4, 1731-1736 p.
HIPIMS, Titanium silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-10437DOI: 10.1016/j.tsf.2006.06.015ISI: 000242931900079OAI: oai:DiVA.org:liu-10437DiVA: diva2:17177
Original publication: J. Alami, P. Eklund, J. Emmerlich, O. Wilhelmsson, U. Jansson, H. Högberg, L. Hultman, & U. Helmersson, High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target, 2006, Thin Solid Films, (515), 4, 1731-1736. http://dx.doi.org/10.1016/j.tsf.2006.06.015. Copyright: Elsevier B.V., http://www.elsevier.com/.2007-12-142007-12-142016-08-31Bibliographically approved