liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1785-0864
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Show others and affiliations
2007 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 7-8, 3434-3438 p.Article in journal (Refereed) Published
Abstract [en]

Ta thin films were grown on Si substrates at different inclination angles with respect to the sputter source using high power impulse magnetron sputtering (HIPIMS), an ionized physical vapor deposition technique. The ionization allowed for better control of the energy and directionality of the sputtered species, and consequently for improved properties of the deposited films. Depositions were made on Si substrates with the native oxide intact. The structure of the as deposited films was investigated using X-ray diffraction, while a four-point probe setup was used to measure the resistivity. A substrate bias process-window for growth of bcc-Ta was observed. However, the process-window position changed with changing inclination angles of the substrate. The formation of this low-resistivity bcc-phase could be understood in light of the high ion flux from the HIPIMS discharge.

Place, publisher, year, edition, pages
Elsevier , 2007. Vol. 515, no 7-8, 3434-3438 p.
Keyword [en]
HPPMS, Ionized PVD, IPVD, Pulsed sputtering
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-10442DOI: 10.1016/j.tsf.2006.10.013OAI: oai:DiVA.org:liu-10442DiVA: diva2:17181
Note
Original publication: J. Alamia, P. Eklunda, J.M. Anderssona, M. Lattemanna, E. Wallina, J. Bohlmarka, P. Perssona, and U. Helmersson, Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering, 2007, Thin Solid Films, (515), 7-8, 3434-3438. http://dx.doi.org/10.1016/j.tsf.2006.10.013. Copyright: Elsevier B.V., http://www.elsevier.com/Available from: 2007-12-14 Created: 2007-12-14 Last updated: 2017-12-14Bibliographically approved
In thesis
1. Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
Open this publication in new window or tab >>Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
2005 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The present thesis addresses two research areas related to film growth in a highly ionized magnetron sputtering system: plasma characterization, and thin film growth and analysis. The deposition technique used is called high power pulsed magnetron sputtering (HPPMS). Characteristic for this technique are high energy pulses (a few Joules) of length 50-100 µs that are applied to the target (cathode) with a duty time of less than 1 % of the total pulse time. This results in a high electron density in the discharge (>1x1019 m-3) and leads to an increase of the ionization fraction of the sputtered material reaching up to 70 % for Cu.

In this work the spatial and temporal evolution of the plasma parameters, including the electron energy distribution function (EEDF), the electron density and the electron temperature are determined using electrostatic Langmuir probes. Electron temperature measurements reveal a low effective temperature of 2-3 eV. The degree of ionization in the HPPMS discharge is explained in light of the self-sputtering yield of the target material. A simple model is therefore provided in order to compare the sputtering yield in HPPMS and that in dc magnetron sputtering (dcMS) for the same average power.

Thin Ta films are grown using HPPMS and dcMS and their properties are studied. It is shown that enhanced microstructure and morphology of the deposited films is achieved by HPPMS. The Ta films are also deposited at a number of substrate inclination angles ranging from 0o (i.e., facing the target surface) up to 180 o (i.e., facing away from the target). Deposition rate measurements performed at all inclination angles for both techniques, reveal that growth made using HPPMS resulted in an improved film thickness at higher inclination. Furthermore, the high ionization of the Ta atoms in HPPMS discharge is found to allow for phase tailoring of the deposited films at all inclination angles by applying a bias voltage to the substrate. Finally, highly ionized magnetron sputtering of a compound MAX-phase material (Ti3SiC2) is performed, demonstrating that the HPPMS discharge could also be used to tailor the composition of the growing Ti-Si-C films.

Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi, 2005
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 948
Keyword
Highly ionized pulsed magnetron sputtering, HPPMS, HPPIMS, thin film, plasma analysis, Langmuir probe
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-4147 (URN)91-85299-40-5 (ISBN)
Public defence
2005-06-03, 10:15 (English)
Opponent
Supervisors
Note
On the day of the public defence of the doctoral thesis, the status of articles III and IV was Submitted. The titles of papers VI and VII changed between their manuscript forms and when they were published.Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2013-10-30

Open Access in DiVA

fulltext(161 kB)1352 downloads
File information
File name FULLTEXT01.pdfFile size 161 kBChecksum MD5
3ef65e19e0ed2cb012353734dbb57756e1648354eab175fae10191de093473aca4576372
Type fulltextMimetype application/pdf

Other links

Publisher's full textLink to Ph.D. thesis

Authority records BETA

Alami, JonesEklund, PerAndersson, Jon M.Lattemann, MartinaWallin, ErikBöhlmark, JohanPersson, PerHelmersson, Ulf

Search in DiVA

By author/editor
Alami, JonesEklund, PerAndersson, Jon M.Lattemann, MartinaWallin, ErikBöhlmark, JohanPersson, PerHelmersson, Ulf
By organisation
Plasma and Coating Physics The Institute of TechnologyThin Film PhysicsDepartment of Physics, Chemistry and Biology
In the same journal
Thin Solid Films
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 1352 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 698 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf