Molecular content of the deposition flux during reactive Ar/O2 magnetron sputtering of Al
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 88, no 05, Art. No. 054101 JAN 30 2006- p.Article in journal (Refereed) Published
The deposition flux obtained during reactive radio frequency magnetron sputtering of an Al target in Ar/O2 gas mixtures was studied by mass spectrometry. The results show significant amounts of molecular AlO+ (up to 10% of the Al+ flux) in the ionic flux incident onto the substrate. In the presence of ~10–4 Pa H2O additional OH+ and AlOH+ were detected, amounting to up to about 100% and 30% of the Al+ flux, respectively. Since the ions represent a small fraction of the total deposition flux, an estimation of the neutral content was also made. These calculations show that, due to the higher ionization probability of Al, the amount of neutral AlO in the deposition flux is of the order of, or even higher than, the amount of Al. These findings might be of great aid when explaining the alumina thin film growth process.
Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi , 2006. Vol. 88, no 05, Art. No. 054101 JAN 30 2006- p.
alumina, dielectric thin films, sputter deposition, mass spectra
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-10452DOI: 10.1063/1.2170404OAI: oai:DiVA.org:liu-10452DiVA: diva2:17188
Original publication: Andersson, J.M., Wallin, E., Münger, E.P. & Helmersson, U., Molecular content of the deposition flux during reactive Ar/O2 magnetron sputtering of Al, 2006, Applied Physics Letters, (88), 054101. http://dx.doi.org/10.1063/1.2170404. Copyright: American Institute of Physics, http://apl.aip.org/apl/top.jsp2007-12-172007-12-172013-10-30