Influence of Er and O concentrations on the microstructure and luminescence of Si:Er/O LEDs
2008 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, Vol. 100, no 042010Article in journal (Refereed) Published
Erbium(Er)/Oxygen(O) doped Silicon (Si) layers grown by molecular beam epitaxy (MBE), can be used for fabricating Si-based light emitting diodes. The electroluminescence intensity from these layers depends sensitively on the formation of specific types of Er/O precipitates inside the Si host. We have performed a detailed microstructure analysis of MBE-grown Er/O doped Si layers using electron microscopy and combined it with secondary ion mass spectrometry (SIMS) measurements as well as electroluminescence studies. Two types of microstructures are observed in different samples with specific Er and O concentrations and grown using Er and Si co-evaporation in O ambient. The first type of microstructure consists of planar precipitates along (311) planes mostly initiated at the onset of the growth of the Si:Er/O layer. The second characteristic type of microstructure observed contain round precipitates of Er/O. Using analytical microscopy techniques it was revealed that the round precipitates contain a higher ratio of Er to O as compared to the planar precipitates of the first type. The planar precipitates normally result in structures with high electroluminescence intensity while the structures with round precipitates have low intensity.
Place, publisher, year, edition, pages
2008. Vol. 100, no 042010
IdentifiersURN: urn:nbn:se:liu:diva-12569DOI: 10.1088/1742-6596/100/4/042010OAI: oai:DiVA.org:liu-12569DiVA: diva2:1722