Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 89, 083510-083513 p.Article in journal (Refereed) Published
A three-terminal metal-oxide-semiconductor field-effect transistor type of photodetector has been fabricated with a multiple stack of Ge dot/SiGe quantum-well heterostructures as the active region for light detection at 1.3–1.55 µm. Gate-dependent edge incidence photoconductivity measurements at room temperature revealed a strong dependence of the photoresponse on the gate voltage. At positive gate bias, the hole transport from the dots into the wells was improved, resulting in a faster response. The high photoresponsivity at negative VG, measured to be 350 mA W–1 at 1.31 µm and 30 mA W–1 at 1.55 µm, was ascribed to the photoconductive gain.
Place, publisher, year, edition, pages
2006. Vol. 89, 083510-083513 p.
germanium, Ge-Si alloys, elemental semiconductors, semiconductor quantum wells, photodetectors, MOSFET, photoconductivity
IdentifiersURN: urn:nbn:se:liu:diva-12573DOI: 10.1063/1.2337867OAI: oai:DiVA.org:liu-12573DiVA: diva2:1726