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Electronic structure of the Si(110)-(16×2) surface: High-resolution ARPES and STM investigation
Chiba University.
National Institute of Material Science, Japan.
Tohoku University.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology. (Yt- och Halvledarfysik, Surface and Semiconductor Physics)
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2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 79, no 4, 045304- p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of a single domain Si(110)-(16×2) surface has been investigated by high-resolution angle-resolved photoelectron spectroscopy and scanning tunneling microscopy (STM). Four semiconducting surface states with flat dispersions, whose binding energies are 0.2, 0.4, 0.75, and 1.0 eV, were observed in the bulk band gap and more than six states were observed within the projected bulk band at binding energies less than 5.2 eV. The origins of the four surface states and of one state at a binding energy of approximately 1.5 eV at the Γ̅ point are discussed based on the local density of states mappings obtained by STM. Further, a structural model that can explain all these five states is proposed.

Place, publisher, year, edition, pages
2009. Vol. 79, no 4, 045304- p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-16836DOI: 10.1103/PhysRevB.79.045304ISI: 000262978400064OAI: diva2:174381
Available from: 2013-03-26 Created: 2009-02-20 Last updated: 2013-03-26Bibliographically approved

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Eriksson, JohanUhrberg, Roger
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Surface and Semiconductor PhysicsThe Institute of Technology
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