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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
University of Bristol.
University of Bristol.
QinetiQ Ltd.
QinetiQ Ltd.
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2009 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 30, no 2, 103-106 p.Article in journal (Refereed) Published
Abstract [en]

Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.

Place, publisher, year, edition, pages
2009. Vol. 30, no 2, 103-106 p.
Keyword [en]
CVD, epitaxial layers, FETs, gallium compounds, MODFETs, resistance heating
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-16864DOI: 10.1109/LED.2008.2010340OAI: oai:DiVA.org:liu-16864DiVA: diva2:174412
Available from: 2009-02-22 Created: 2009-02-20 Last updated: 2017-12-13

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Forsberg, UrbanLundskog, AndersKakanakova-Georgieva, AneliaPozina, GaliaJanzén, Erik

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