On the response mechanism of SiC based field effect gas sensors towards non-hydrogen containing species and specifically NO
(English)Manuscript (Other academic)
The response characteristics of Metal Insulator Silicon Carbide (MISiC) field effect sensor devices, with platinum (Pt) as the metal contact, towards nitrogen oxide (NO) for both low as well as relatively high background oxygen (O2) concentrations and different temperatures have been investigated at atmospheric pressure. Devices with both porous and dense Pt metal gate contacts have been investigated and the results seem to confirm the theories and results from earlier measurements regarding the requirement of porous metal films for the existence of a response to NO for this kind of sensor device. The results also suggest that no NO induced increased sensitivity to background hydrogen exists, at least it does not play any role in the observed NO sensitivity, as opposed to what has been suggested in the case of CO. The obtained results are also discussed in relation to some of the proposed sensing mechanisms for non-hydrogen containing substances and in comparison to NO reduction characteristics on Pt/SiO2 catalysts, as reported in literature. The results further give some indications about also some other process/ processes being important for the response of SiC based field effect sensors towards NO than just adsorption/desorption.
IdentifiersURN: urn:nbn:se:liu:diva-13096OAI: oai:DiVA.org:liu-13096DiVA: diva2:17826
This manuscript was never submitted to a journal and will not be published.2008-04-012008-04-012016-06-14Bibliographically approved