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On the Possibility of Realizing a 2D Structure of Si-N Bonds by Metal-Organic Chemical Vapor Deposition
Inst Tech Phys & Mat Sci, Hungary.
Inst Tech Phys & Mat Sci, Hungary.
CNR, Italy.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2023 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951Article in journal (Refereed) Epub ahead of print
Abstract [en]

2D SiN honeycomb monolayer structures predicted theoretically have been the focus of interest in materials science for a long time, most recently for their semiconducting and ferromagnetic properties. Herein, by investigating metal-organic chemical vapor deposition processes and direct heat treatment of epitaxial graphene in ammonia flow, the possibility of realizing a certain periodic 2D structure via Si-N bonds under epitaxial graphene on SiC (0001) is reported. The result is of interest because it is compatible with semiconductor material deposition technologies and future use in nanoscience and nanotechnology.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2023.
Keywords [en]
ammonia; graphene; metal-organic chemical vapor deposition; silicon nitride
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-197472DOI: 10.1002/pssb.202300262ISI: 001048748900001OAI: oai:DiVA.org:liu-197472DiVA, id: diva2:1794562
Note

Funding Agencies|Swedish Research Council [VR2017-04071, TKP2021-NKTA-05, VEKOP-2.3.3-15-2016-00002, CNR-HAS 2022-25]

Available from: 2023-09-06 Created: 2023-09-06 Last updated: 2023-09-06

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Kakanakova-Gueorguieva, Anelia
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