Structural and optical characterization of Si/Ge quantum dots
Independent thesis Basic level (professional degree), 20 credits / 30 HE creditsStudent thesis
In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.
The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.
As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.
Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi , 2008. , 39 p.
quantum dot, IR detector, bolometer, semiconductor, germanium, silicon
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-11672ISRN: LITH-IFM-A-EX--08/1916--SEOAI: oai:DiVA.org:liu-11672DiVA: diva2:18099
Subject / course
2008-02-25, Pascal, Fysikhuset, Linköpings universitet 581 83, Linköping, 14:15
Wissmar, StanleyRadamson, Henry