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Structural and optical characterization of Si/Ge quantum dots
Linköping University, Department of Physics, Chemistry and Biology.
2008 (English)Independent thesis Basic level (professional degree), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.

The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.

As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.

Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi , 2008. , 39 p.
Keyword [en]
quantum dot, IR detector, bolometer, semiconductor, germanium, silicon
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
URN: urn:nbn:se:liu:diva-11672ISRN: LITH-IFM-A-EX--08/1916--SEOAI: oai:DiVA.org:liu-11672DiVA: diva2:18099
Subject / course
Material Physics
Presentation
2008-02-25, Pascal, Fysikhuset, Linköpings universitet 581 83, Linköping, 14:15
Uppsok
Technology
Supervisors
Examiners
Available from: 2008-04-29 Created: 2008-04-29 Last updated: 2012-04-24Bibliographically approved

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CiteExportLink to record
Permanent link

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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf