The quest for lowering energy consumption during thin film growth by magnetron sputtering techniques becomes of particular importance in view of sustainable development goals. As large fraction of the process energy is consumed in substrate heating for the purpose of providing high adatom mobility necessary to grow dense films, the most straightforward strategy toward more environment-friendly processing is to find alternatives to thermally activated surface diffusion. One possibility is offered by high mass metal ion irradiation of the growing film surface, which has been recently shown to be very effective in densification of transition metal nitride layers grown with no external heating, such that Zone 2 microstructures of the structure-zone model are obtained in the substrate temperature T-s range otherwise typical for Zone 1 growth. The large mass difference between the incident ion and the atoms constituting the film results in effective creation of low energy recoils, which leads to film densification at low T-s. Due to their high mass, metal ions become incorporated at lattice sites beyond the near-surface region of intense recoil generation leading to further densification, while preventing the buildup of residual stress. The practical implementation of this technique discussed in this Perspective employs heavy metal targets operating in the high-power impulse magnetron sputtering (HiPIMS) mode to provide periodic metal-ion fluxes that are accelerated in the electric field of the substrate to irradiate layers deposited from direct current magnetron sputtering (DCMS) sources. A key feature of this hybrid HiPIMS/DCMS configuration is the substrate bias that is synchronized with heavy metal ion fluxes for selective control of their energy and momentum. As a consequence, the major fraction of process energy is used at sputtering sources and for film densification, rather than for heating of the entire vacuum vessel. Model material systems include TiN and metastable NaCl-structure Ti1-yAlyN films, which are well-known for challenges in stoichiometry and phase stability control, respectively, and are of high relevance for industrial applications. This Perspective provides a comprehensive overview of the novel film growth method. After presenting basic concepts, time-resolved measurements of ion fluxes at the substrate plane, essential for selective control of metal ion energy and momentum, are discussed. The role of metal ion mass, energy, momentum, and concentration is described in more detail. As some applications require substrate rotation for conformal coating, a section is devoted to the related complexity in the implementation of metal-ion-synchronized growth under industrial conditions.