Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
2006 (English)In: Applied physics letters, ISSN 0003-6951, Vol. 89, 181901-1--181901-3 p.Article in journal (Refereed) Published
Strain relaxation of SiGe/Si(110) has been studied by x-ray reciprocal space mapping. To get information about the in-plane lattice mismatch in different directions, two-dimensional maps around, e.g., (260) and (062) reciprocal lattice points have been obtained from Si0.8Ge0.2/Si(110) samples, which were exposed to different annealing conditions. The in-plane lattice mismatch was found to be asymmetric with the major strain relaxation observed in the lateral  direction. This was associated with the formation and propagation of dislocations oriented along . The relaxation of as-grown structures during postannealing is thus different from relaxation during growth, which is mainly along .
Place, publisher, year, edition, pages
2006. Vol. 89, 181901-1--181901-3 p.
Ge-Si alloys, silicon, semiconductor materials, elemental semiconductors, X-ray diffraction, annealing, dislocations, stress relaxation
IdentifiersURN: urn:nbn:se:liu:diva-13276DOI: 10.1063/1.2364861OAI: oai:DiVA.org:liu-13276DiVA: diva2:18172