Spin polarization in modulation-doped GaAs quantum wires
2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 77, no 16, 165306- p.Article in journal (Refereed) Published
We study spin polarization in a split-gate quantum wire focusing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin density approximation. We find that depending on the electron density, the spin polarization exhibits qualitatively different features. For the case of relatively high electron density, when the Fermi energy EF exceeds a characteristic strength of a long-range impurity potential Vdonors, the density spin polarization inside the wire is practically negligible and the wire conductance is spin-degenerate. When the density is decreased such that EF approaches Vdonors, the electron density and conductance quickly become spin polarized. With further decrease of the density the electrons are trapped inside the lakes (droplets) formed by the impurity potential and the wire conductance approaches the pinch-off regime. We discuss the limitations of the density functional theory in the local spin density approximation in this regime and compare the obtained results with available experimental data.
Place, publisher, year, edition, pages
Institutionen för teknik och naturvetenskap , 2008. Vol. 77, no 16, 165306- p.
IdentifiersURN: urn:nbn:se:liu:diva-11757DOI: 10.1103/PhysRevB.77.16530OAI: oai:DiVA.org:liu-11757DiVA: diva2:18188
Original publication: M. Evaldsson, S. Ihnatsenka, and I. V. Zozoulenko, Spin polarization in modulation-doped GaAs quantum wires, 2008, Physical Review B, (77), 165306. http://dx.doi.org/10.1103/PhysRevB.77.165306. Copyright: The America Physical Society, http://prb.aps.org/2008-05-082008-05-082015-02-13Bibliographically approved