Single-stage, High Efficiency, 26-Watt power Amplifier using SiC LE-MESFET
2006 (English)In: Microwave Conference, 2006. APMC 2006. Asia-Pacific December 12-15, 2006, 441-444 p.Conference paper (Refereed)
This paper describes a single-stage 26 W negative feedback power amplifier, covering the frequency range 200-500 MHz using a 6 mm gate width SiC lateral epitaxy MESFET. Typical results at 50 V drain bias for the whole band are, around 22 dB power gain, around 43 dBm output power, minimum power added efficiency at P1 dB is 47% at 200 MHz and maximum 60% at 500 MHz and the IMD3 level at 10 dB back-off from P1 dB is below -45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66% PAE.
Place, publisher, year, edition, pages
2006. 441-444 p.
Schottky gate field effect transistors, feedback, microwave power amplifiers, silicon compounds, SiC, frequency 200 MHz to 500 MHz, lateral epitaxy MESFET, negative feedback, power 26 W, power amplifier, size 6 mm, voltage 50 V
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-13283DOI: 10.1109/APMC.2006.4429458OAI: oai:DiVA.org:liu-13283DiVA: diva2:18204