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Single-stage, High Efficiency, 26-Watt power Amplifier using SiC LE-MESFET
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
Swedish Defense Research Agency (FOI), Box 1165, SE-581 11 Linköping, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
2006 (English)In: Microwave Conference, 2006. APMC 2006. Asia-Pacific December 12-15, 2006, 441-444 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper describes a single-stage 26 W negative feedback power amplifier, covering the frequency range 200-500 MHz using a 6 mm gate width SiC lateral epitaxy MESFET. Typical results at 50 V drain bias for the whole band are, around 22 dB power gain, around 43 dBm output power, minimum power added efficiency at P1 dB is 47% at 200 MHz and maximum 60% at 500 MHz and the IMD3 level at 10 dB back-off from P1 dB is below -45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66% PAE.

Place, publisher, year, edition, pages
2006. 441-444 p.
Keyword [en]
Schottky gate field effect transistors, feedback, microwave power amplifiers, silicon compounds, SiC, frequency 200 MHz to 500 MHz, lateral epitaxy MESFET, negative feedback, power 26 W, power amplifier, size 6 mm, voltage 50 V
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-13283DOI: 10.1109/APMC.2006.4429458OAI: oai:DiVA.org:liu-13283DiVA: diva2:18204
Available from: 2008-05-13 Created: 2008-05-13 Last updated: 2009-09-24Bibliographically approved
In thesis
1. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
Open this publication in new window or tab >>Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
2008 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. In this thesis, Class C switching response of SiC MESFET in TCAD and two different generations of broadband power amplifiers have been designed, fabricated and characterized. Input and output matching networks and shunt feedback topology based on microstrip and lumped components have been designed, to increase the bandwidth and to improve the stability. The first amplifier is a single stage 26-watt using a SiC MESFET covering the frequency from 200-500 MHz is designed and fabricated. Typical results at 50 V drain bias for the whole band are, 22 dB power gain, 43 dBm output power, minimum power added efficiency at P 1dB is 47 % at 200 MHz and maximum 60 % at 500 MHz and the IMD3 level at 10 dB back-off from P 1dB is below ‑45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66 % PAE.

In the second phase, two power amplifiers at 0.7-1.8 GHz without feed back for SiC MESFET and with feedback for GaN HEMT are designed and fabricated (both these transistors were of 10 W). The measured maximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32 % and a power gain above 10 dB. At a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with a PAE of 34.4 %. The measured results for GaN amplifier are; maximum output power at Vd = 48 V is 40 dBm (~10 W), with a PAE of 34 % and a power gain above 10 dB. The SiC amplifier gives better results than for GaN amplifier for the same 10 W transistor.

A comparison between the physical simulations and measured device characteristics has also been carried out. A novel and efficient way to extend the physical simulations to large signal high frequency domain was developed in our group, is further extended to study the class-C switching response of the devices. By the extended technique the switching losses, power density and PAE in the dynamics of the SiC MESFET transistor at four different frequencies of 500 MHz, 1, 2 and 3 GHz during large signal operation and the source of switching losses in the device structure was investigated. The results obtained at 500 MHz are, PAE of 78.3%, a power density of 2.5 W/mm with a switching loss of 0.69 W/mm. Typical results at 3 GHz are, PAE of 53.4 %, a power density of 1.7 W/mm with a switching loss of 1.52 W/mm.

Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi, 2008. 24 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1374
Keyword
Wide bandgap, SiC, MESFET, GaN, HEMT, Power Amplifiers
National Category
Materials Engineering
Identifiers
urn:nbn:se:liu:diva-11786 (URN)978-91-7393-855-6 (ISBN)
Presentation
2008-05-29, Röntgen P404, Physics (IFM), Department of Physics, Chemistry and Biology (IFM), IFM, 13:00 (English)
Opponent
Supervisors
Note
Report code: LIU-TEK-LIC-2008:32Available from: 2008-05-13 Created: 2008-05-13 Last updated: 2009-04-23
2. Microwave Power Devices and Amplifiers for Radars and Communication Systems
Open this publication in new window or tab >>Microwave Power Devices and Amplifiers for Radars and Communication Systems
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. Similarly Si-LDMOS being low cost and lonely silicon based RF power transistor has great contributions especially in the communication sector.

The focus of this thesis work is both device study and their application in different classes of power amplifiers. In the first part of our research work, we studied the performance of transistors in device simulation using physical transistor structure in Technology Computer Aided Design (TCAD). A comparison between the physical simulations and measured device characteristics has been carried out.  We optimized GaN HEMT, Si-LDMOS and enhanced version of our previously fabricated and tested SiC MESFET transistor for enhanced RF and DC characteristics. For large signal AC performance we further extended the computational load pull (CLP) simulation technique to study the switching response of the power transistors. The beauty of our techniques is that, we need no lumped or distributive matching networks to study active device behavior in almost all major classes of power amplifiers. Using these techniques, we studied class A, AB, pulse input class-C and class-F switching response of SiC MESFET. We obtained maximum PAE of 78.3 % with power density of 2.5 W/mm for class C and 84 % for class F power amplifier at 500 MHz. The Si-LDMOS has a vital role and is a strong competitor to wideband gap semiconductor technology in communication sector. We also studied Si-LDMOS (transistor structure provided by Infineon Technologies at Kista, Stockholm) for improved DC and RF performance. The interface charges between the oxide and RESURF region are used not only to improve DC drain current and RF power, gain & efficiency but also enhance its operating frequency up to 4 GHz.

In the second part of our research work, six single stage (using single transistor) power amplifiers have been designed, fabricated and characterized in three phases for applications in communications, Phased Array Radars and EW systems. In the first phase, two class AB power amplifiers are designed and fabricated. The first PA (26 W) is designed and fabricated at 200-500 MHz using SiC MESFET. Typical results for this PA at 60 V drain bias at 500 MHz are, 24.9 dB of power gain, 44.15 dBm output power (26 W) and 66 % PAE. The second PA is designed at 30-100 MHz using SiC MESFET. At 60 V drain bias Pmax is 46.7 dBm (~47 W) with a power gain of 21 dB.

In the second phase, for performance comparison, three broadband class AB power amplifiers are designed and fabricated at 0.7-1.8 GHz using SiC MESFET and two different GaN HEMT technologies (GaN HEMT on SiC and GaN HEMT on Silicon substrate). The measured maximum output power for the SiC MESFET amplifier at a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with a PAE of 34.4 %. The results for GaN HEMT on SiC amplifier are; maximum output power at Vd = 48 V is 40 dBm (~10 W), with a PAE of 34 % and a power gain above 10 dB. The maximum output power for GaN HEMT on Si amplifier is 42.5 dBm (~18 W) with a maximum PAE of 39 % and a gain of 19.5 dB.

In the third phase, a high power single stage class E power amplifier is implemented with lumped elements at 0.89-1.02 GHz using Silicon GaN HEMT as an active device. The maximum drain efficiency (DE) and PAE of 67 and 65 % respectively is obtained with a maximum output power of 42.2 dBm (~ 17 W) and a maximum power gain of 15 dB.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2009. 66 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1265
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-19267 (URN)978-91/7393-576-0 (ISBN)
Public defence
2009-09-11, BL32 (Nobel), B-huset, Campus Valla, Linköpings universitet, Linkoping, 10:15 (English)
Opponent
Supervisors
Available from: 2009-09-24 Created: 2009-08-21 Last updated: 2009-09-24Bibliographically approved

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Azam, SherWahab, Qamar

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