Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies
2008 (English)In: IEEE European Microwave Week, October 10-15, Amsterdam, The Netherlands, 2008, 444-447 p.Conference paper (Refereed)
This paper describes the design, fabrication and measurement of two single-stage class-AB power amplifiers covering the frequency band from 0.7-1.8 GHz using a SiC MESFET and a GaN HEMT. The measured maximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32% and a power gain above 10 dB. At a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with a PAE of 34.4%. The measured results for GaN amplifier are; maximum output power at Vd = 48 V is 40 dBm (~10 W), with a PAE of 34% and a power gain above 10 dB. The results for SiC amplifier are better than for GaN amplifier for the same 10-W transistor.
Place, publisher, year, edition, pages
2008. 444-447 p.
IdentifiersURN: urn:nbn:se:liu:diva-13284DOI: 10.1109/EUMC.2008.4751484OAI: oai:DiVA.org:liu-13284DiVA: diva2:18205