Pulse Input Class-C Power Amplifier Response of SiC MESFET using Physical Transistor Structure in TCAD
2008 (English)In: Solid-State Electronics, ISSN 0038-1101, Vol. 52, no 5, 740-744 p.Article in journal (Refereed) Published
The switching behavior of a previously fabricated and tested SiC transistor is studied in Class-C amplifier in TCAD simulation. The transistor is simulated for pulse input signals in Class-C power amplifier. The simulated gain (dB), power density (W/mm) and power added efficiency (PAE%) at 500 MHz, 1, 2 and 3 GHz was studied using computational TCAD load pull simulation technique. A Maximum PAE of 77.8% at 500 MHz with 45.4 dB power gain and power density of 2.43 W/mm is achieved. This technique allows the prediction of switching response of the device for switching amplifier Classes (Class-C–F) before undertaking an expensive and time consuming device fabrication. The beauty of this technique is that, we need no matching and other lumped element networks for studying the large signal behavior of RF and microwave transistors.
Place, publisher, year, edition, pages
2008. Vol. 52, no 5, 740-744 p.
Pulse, Class-C, Power amplifier, New technique, Silicon carbide, MESFET
IdentifiersURN: urn:nbn:se:liu:diva-13285DOI: 10.1016/j.sse.2007.09.022OAI: oai:DiVA.org:liu-13285DiVA: diva2:18206