Semiconducting nanowires (NWs) fabricated from III-V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The NWs are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates with SiO2 mask holes. The nucleation and growth of the GaAs nanowires core are carried out by Ga-induced vapor-liquid-solid growth at the open holes. Finely controlled, vertically aligned, regular core-multishell NWs with uniform wire length and diameter are obtained with a 96% yield and targeted nitrogen concentrations of 0%, 2%, and 3%. The GaInNAs NWs exhibit a spectral red shift relative to the GaAs NWs peak. Their emission wavelength increases with the N content reaching up to 1.26 mu m, which makes them a promising tool in telecommunication light sources.
Funding Agencies|Japan Society for the Promotion of Science [16H05970, 19H00855, 21KK0068, 23H00250]; Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT) [22UT1160]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [JA2014-5698]; Swedish Research Council [2019-04312]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]