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Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
2008 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. In this thesis, Class C switching response of SiC MESFET in TCAD and two different generations of broadband power amplifiers have been designed, fabricated and characterized. Input and output matching networks and shunt feedback topology based on microstrip and lumped components have been designed, to increase the bandwidth and to improve the stability. The first amplifier is a single stage 26-watt using a SiC MESFET covering the frequency from 200-500 MHz is designed and fabricated. Typical results at 50 V drain bias for the whole band are, 22 dB power gain, 43 dBm output power, minimum power added efficiency at P 1dB is 47 % at 200 MHz and maximum 60 % at 500 MHz and the IMD3 level at 10 dB back-off from P 1dB is below ‑45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66 % PAE.

In the second phase, two power amplifiers at 0.7-1.8 GHz without feed back for SiC MESFET and with feedback for GaN HEMT are designed and fabricated (both these transistors were of 10 W). The measured maximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32 % and a power gain above 10 dB. At a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with a PAE of 34.4 %. The measured results for GaN amplifier are; maximum output power at Vd = 48 V is 40 dBm (~10 W), with a PAE of 34 % and a power gain above 10 dB. The SiC amplifier gives better results than for GaN amplifier for the same 10 W transistor.

A comparison between the physical simulations and measured device characteristics has also been carried out. A novel and efficient way to extend the physical simulations to large signal high frequency domain was developed in our group, is further extended to study the class-C switching response of the devices. By the extended technique the switching losses, power density and PAE in the dynamics of the SiC MESFET transistor at four different frequencies of 500 MHz, 1, 2 and 3 GHz during large signal operation and the source of switching losses in the device structure was investigated. The results obtained at 500 MHz are, PAE of 78.3%, a power density of 2.5 W/mm with a switching loss of 0.69 W/mm. Typical results at 3 GHz are, PAE of 53.4 %, a power density of 1.7 W/mm with a switching loss of 1.52 W/mm.

Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi , 2008. , 24 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1374
Keyword [en]
Wide bandgap, SiC, MESFET, GaN, HEMT, Power Amplifiers
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:liu:diva-11786ISBN: 978-91-7393-855-6 (print)OAI: oai:DiVA.org:liu-11786DiVA: diva2:18207
Presentation
2008-05-29, Röntgen P404, Physics (IFM), Department of Physics, Chemistry and Biology (IFM), IFM, 13:00 (English)
Opponent
Supervisors
Note
Report code: LIU-TEK-LIC-2008:32Available from: 2008-05-13 Created: 2008-05-13 Last updated: 2009-04-23
List of papers
1. Single-stage, High Efficiency, 26-Watt power Amplifier using SiC LE-MESFET
Open this publication in new window or tab >>Single-stage, High Efficiency, 26-Watt power Amplifier using SiC LE-MESFET
2006 (English)In: Microwave Conference, 2006. APMC 2006. Asia-Pacific December 12-15, 2006, 441-444 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper describes a single-stage 26 W negative feedback power amplifier, covering the frequency range 200-500 MHz using a 6 mm gate width SiC lateral epitaxy MESFET. Typical results at 50 V drain bias for the whole band are, around 22 dB power gain, around 43 dBm output power, minimum power added efficiency at P1 dB is 47% at 200 MHz and maximum 60% at 500 MHz and the IMD3 level at 10 dB back-off from P1 dB is below -45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66% PAE.

Keyword
Schottky gate field effect transistors, feedback, microwave power amplifiers, silicon compounds, SiC, frequency 200 MHz to 500 MHz, lateral epitaxy MESFET, negative feedback, power 26 W, power amplifier, size 6 mm, voltage 50 V
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-13283 (URN)10.1109/APMC.2006.4429458 (DOI)
Available from: 2008-05-13 Created: 2008-05-13 Last updated: 2009-09-24Bibliographically approved
2. Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies
Open this publication in new window or tab >>Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies
2008 (English)In: IEEE European Microwave Week, October 10-15, Amsterdam, The Netherlands, 2008, 444-447 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper describes the design, fabrication and measurement of two single-stage class-AB power amplifiers covering the frequency band from 0.7-1.8 GHz using a SiC MESFET and a GaN HEMT. The measured maximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32% and a power gain above 10 dB. At a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with a PAE of 34.4%. The measured results for GaN amplifier are; maximum output power at Vd = 48 V is 40 dBm (~10 W), with a PAE of 34% and a power gain above 10 dB. The results for SiC amplifier are better than for GaN amplifier for the same 10-W transistor.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-13284 (URN)10.1109/EUMC.2008.4751484 (DOI)
Available from: 2008-05-13 Created: 2008-05-13 Last updated: 2009-09-24Bibliographically approved
3. Pulse Input Class-C Power Amplifier Response of SiC MESFET using Physical Transistor Structure in TCAD
Open this publication in new window or tab >>Pulse Input Class-C Power Amplifier Response of SiC MESFET using Physical Transistor Structure in TCAD
2008 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 52, no 5, 740-744 p.Article in journal (Refereed) Published
Abstract [en]

The switching behavior of a previously fabricated and tested SiC transistor is studied in Class-C amplifier in TCAD simulation. The transistor is simulated for pulse input signals in Class-C power amplifier. The simulated gain (dB), power density (W/mm) and power added efficiency (PAE%) at 500 MHz, 1, 2 and 3 GHz was studied using computational TCAD load pull simulation technique. A Maximum PAE of 77.8% at 500 MHz with 45.4 dB power gain and power density of 2.43 W/mm is achieved. This technique allows the prediction of switching response of the device for switching amplifier Classes (Class-C–F) before undertaking an expensive and time consuming device fabrication. The beauty of this technique is that, we need no matching and other lumped element networks for studying the large signal behavior of RF and microwave transistors.

Keyword
Pulse, Class-C, Power amplifier, New technique, Silicon carbide, MESFET
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-13285 (URN)10.1016/j.sse.2007.09.022 (DOI)
Available from: 2008-05-13 Created: 2008-05-13 Last updated: 2017-12-13Bibliographically approved

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