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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 15, 151904- p.Article in journal (Refereed) Published
Abstract [en]

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra for the annealed samples. The temporal changes in PL are permanent at low temperatures; however, they can be recovered after heating to 100 K or higher.

Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi , 2008. Vol. 92, no 15, 151904- p.
Keyword [en]
annealing, energy gap, excitons, gallium compounds, III-V semiconductors, impurity states, magnesium, photoluminescence, semiconductor thin films, vapour phase epitaxial growth
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-11815DOI: 10.1063/1.2909541OAI: oai:DiVA.org:liu-11815DiVA: diva2:18233
Note
Original publication: Pozina, G., Hemmingsson, C., Paskov, P.P., Bergman, J.P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I. and Usui, A., Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates, 2008, Applied Physics Letters, (92), 15, 151904. http://dx.doi.org/10.1063/1.2909541. Copyright: American Institute of Physics, http://apl.aip.org/apl/top.jspAvailable from: 2008-05-15 Created: 2008-05-15 Last updated: 2017-12-13

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Pozina, GaliaHemmingsson, CarlPaskov, Plamen P.Bergman, PederMonemar, Bo

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