Fabrication and characterisation of a novel MOSFET gas sensor
Independent thesis Basic level (professional degree)Student thesisAlternative title
Tillverkning och karaktärisering av en ny MOSFET-gassensor (Swedish)
A novel MOSFET gas sensor for the investigation has been developed. Its configuration resembles a"normally on"n-type thin-film transistor (TFT) with a gas sensitive metal oxide as a channel. The device used in the experiments only differs from common TFTs in the gate configuration. In order to allow gas reactions with the SnO2-surface, the gate is buried under the semiconducting layer. Without any gate voltage, the device works as a conventional metal oxide gas sensor. Applied gate voltages affect the channel carrier concentration and surface potential of the metal oxide, thus causing a change in sensitivity. The results of the gas measurements are in accordance with the electric adsorption effect, which was postulated by Fedor Wolkenstein 1957, and arises the possibility to operate a semiconductor gas sensor at relatively low temperatures and, thereby, be able to integrate CMOS electronics for processing of measurements at the same chip.
Place, publisher, year, edition, pages
Institutionen för systemteknik , 2002. , 80 p.
Technology, MOSFET gas sensor, Wolkenstein Model, CMOS integration
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-1292OAI: oai:DiVA.org:liu-1292DiVA: diva2:18612