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Design and Evaluation of High Density 5T SRAM Cache for Advanced Microprocessors
Linköping University, Department of Electrical Engineering.
2004 (English)Independent thesis Basic level (professional degree)Student thesisAlternative title
Konstruktion och utvärdering av kompakta 5T SRAM cache för avancerade mikroprocessorer (Swedish)
Abstract [en]

This thesis presents a five-transistor SRAM intended for the advanced microprocessor cache market. The goal is to reduce the area of the cache memory array while maintaining competitive performance. Various existing technologies are briefly discussed with their strengths and weaknesses. The design metrics for the five-transistor cell are discussed in detail and performance and stability are evaluated. Finally a comparison is done between a 128Kb memory of an existing six-transistor technology and the proposed technology. The comparisons include area, performance and stability of the memories. It is shown that the area of the memory array can be reduced by 23% while maintaining comparable performance. The new cell also has 43% lower total leakage current. As a trade-off for these advantages some of the stability margin is lost but the cell is still stable in all process corners. The performance and stability has been validated through post-layout simulations using Cadence Spectre.

Place, publisher, year, edition, pages
Institutionen för systemteknik , 2004. , 62 p.
LiTH-ISY-Ex, 3481
Keyword [en]
Electronics, SRAM, high-density, cache, five-transistor, 5T, memory, microprocessor
Keyword [sv]
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:liu:diva-2286OAI: diva2:19616
Available from: 2004-03-29 Created: 2004-03-29

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