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The role of aluminum oxide buffer layer in organic spin-valves performance
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
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2009 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 94, no 5, 053301- p.Article in journal (Refereed) Published
Abstract [en]

The electronic structures of the 8-hydroxyquinoline-aluminum (Alq(3))/Al2O3/Co interfaces were studied by photoelectron spectroscopy. A strong interface dipole was observed, which leads to a reduction in the electron injection barrier. The x-ray photoelectron spectroscopy spectra further indicate that the Al2O3 buffer layer prevents the chemical interaction between Alq(3) molecules and Co atoms. X-ray magnetic circular dichroism results demonstrate that a Co layer deposited on an Al2O3 buffered Alq(3) layer shows better magnetic ordering in the interface region than directly deposited Co, which suggests a better performance of spin valves with such a buffer layer. This is consistent with the recent results from [Dediu , Phys. Rev. B 78, 115203 (2008)].

Place, publisher, year, edition, pages
2009. Vol. 94, no 5, 053301- p.
Keyword [en]
alumina, buffer layers, charge injection, cobalt, electronic structure, ferromagnetic materials, magnetic circular dichroism, MIS structures, organic semiconductors, spin valves, X-ray photoelectron spectra
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-16980DOI: 10.1063/1.3078274OAI: oai:DiVA.org:liu-16980DiVA: diva2:200876
Note

Original Publication:Yiqiang Zhan, Xianjie Liu, Elin Carlegrim, Fenghong Li, I Bergenti, P Graziosi, V Dediu and Mats Fahlman, The role of aluminum oxide buffer layer in organic spin-valves performance, 2009, APPLIED PHYSICS LETTERS, (94), 5, 053301.http://dx.doi.org/10.1063/1.3078274Copyright: American Institute of Physicshttp://www.aip.org/

Available from: 2009-03-06 Created: 2009-02-27 Last updated: 2015-05-18Bibliographically approved

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Zhan, YiqiangLiu, XianjieCarlegrim, ElinLi, FenghongFahlman, Mats

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