Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 90, no 174106Article in journal (Refereed) Published
The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and α-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into Ti2AlN(0001) after only 5 min.
Place, publisher, year, edition, pages
2007. Vol. 90, no 174106
IdentifiersURN: urn:nbn:se:liu:diva-17105DOI: 10.1063/1.2731520OAI: oai:DiVA.org:liu-17105DiVA: diva2:201941