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Plasma dynamics in a highly ionized pulsed magnetron discharge
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
University of Iceland, Reykjavik.
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2005 (English)In: Plasma sources science & technology (Print), ISSN 0963-0252, E-ISSN 1361-6595, Vol. 14, no 3, 525-531 p.Article in journal (Refereed) Published
Abstract [en]

We report on electrostatic probe measurements of a high-power pulsed magnetron discharge. Space- and time-dependent characteristics of the plasma parameters are obtained as functions of the process parameters. By applying high-power pulses (peak power of ~0.5 MW), with a pulse-on time of ~100 µs and a repetition frequency of 20 ms, peak electron densities of the order of ~1019 m− 3, i.e. three orders of magnitude higher than for a conventional dc magnetron discharge, are achieved soon after the pulse is switched on. At high sputtering gas pressures (>5 mTorr), a second peak occurs in the electron density curve, hundreds of microseconds after the pulse is switched off. This second peak is mainly due to an ion acoustic wave in the plasma, reflecting off the chamber walls. This is concluded from the time delay between the two peaks in the electron and ion saturation currents, which is shown to be dependent on the chamber dimensions and the sputtering gas composition. Finally, the electron temperature is determined, initially very high but decreasing rapidly as the pulse is turned off. The reduction seen in the electron temperature, close to the etched area of the cathode, is due to cooling by the sputtered metal atoms.

Place, publisher, year, edition, pages
2005. Vol. 14, no 3, 525-531 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-13374DOI: 10.1088/0963-0252/14/3/015OAI: oai:DiVA.org:liu-13374DiVA: diva2:20532
Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2017-12-13
In thesis
1. Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
Open this publication in new window or tab >>Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
2005 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The present thesis addresses two research areas related to film growth in a highly ionized magnetron sputtering system: plasma characterization, and thin film growth and analysis. The deposition technique used is called high power pulsed magnetron sputtering (HPPMS). Characteristic for this technique are high energy pulses (a few Joules) of length 50-100 µs that are applied to the target (cathode) with a duty time of less than 1 % of the total pulse time. This results in a high electron density in the discharge (>1x1019 m-3) and leads to an increase of the ionization fraction of the sputtered material reaching up to 70 % for Cu.

In this work the spatial and temporal evolution of the plasma parameters, including the electron energy distribution function (EEDF), the electron density and the electron temperature are determined using electrostatic Langmuir probes. Electron temperature measurements reveal a low effective temperature of 2-3 eV. The degree of ionization in the HPPMS discharge is explained in light of the self-sputtering yield of the target material. A simple model is therefore provided in order to compare the sputtering yield in HPPMS and that in dc magnetron sputtering (dcMS) for the same average power.

Thin Ta films are grown using HPPMS and dcMS and their properties are studied. It is shown that enhanced microstructure and morphology of the deposited films is achieved by HPPMS. The Ta films are also deposited at a number of substrate inclination angles ranging from 0o (i.e., facing the target surface) up to 180 o (i.e., facing away from the target). Deposition rate measurements performed at all inclination angles for both techniques, reveal that growth made using HPPMS resulted in an improved film thickness at higher inclination. Furthermore, the high ionization of the Ta atoms in HPPMS discharge is found to allow for phase tailoring of the deposited films at all inclination angles by applying a bias voltage to the substrate. Finally, highly ionized magnetron sputtering of a compound MAX-phase material (Ti3SiC2) is performed, demonstrating that the HPPMS discharge could also be used to tailor the composition of the growing Ti-Si-C films.

Place, publisher, year, edition, pages
Institutionen för fysik, kemi och biologi, 2005
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 948
Keyword
Highly ionized pulsed magnetron sputtering, HPPMS, HPPIMS, thin film, plasma analysis, Langmuir probe
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-4147 (URN)91-85299-40-5 (ISBN)
Public defence
2005-06-03, 10:15 (English)
Opponent
Supervisors
Note
On the day of the public defence of the doctoral thesis, the status of articles III and IV was Submitted. The titles of papers VI and VII changed between their manuscript forms and when they were published.Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2013-10-30

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Alami, JonesBöhlmark, JohanBirch, JensHelmersson, Ulf

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