Using a MISiCFET device as a cold start sensor
2003 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 63, no 1-3, 295-303 p.Article in journal (Refereed) Published
As a consequence of the formation of water droplets in the car engine at cold start, the fragile ZrO2 λ sensor cannot be heated until the engine is sufficiently warm. A possibility to shorten the time before closed loop λ control would decrease the exhaust emission. As a solution to this problem, the metal insulator silicon carbide field effect transistor (MISiCFET) sensor, which presumably is more thermo shock resistant than the ZrO2 sensor, could be used at cold start. The requirements for a cold start sensor are, among others, sensitivity to λ (air to fuel ratio) close to stochiometry, selectivity to λ and high speed of response. In this communication, the possibility of using the MISiCFET sensor at cold start is treated. The sensor consists of a SiC based MOSFET device with a buried channel design and a catalytic gate metal of 10 nm TaSix and 100 nm Pt. The response depends linearly on λ at 500 °C. The sensitivity of the device has been tested both in artificial atmospheres and in an engine. Two-level factorial designed experiments showed a high selectivity to λ compared to other gases such as CO, hydrocarbons, NOx and H2. The response time was found to be <10 ms at 500 °C when changing from an oxidizing to a reducing atmosphere. The MISiCFET sensor response showed interesting differences in λ stairs when the λ-value was varied by changing the oxygen, hydrogen or CO concentration. The results show that the MISiCFET sensor is a promising choice as a future cold start sensor.
Place, publisher, year, edition, pages
2003. Vol. 63, no 1-3, 295-303 p.
Field effect device, Gas sensor, Cold start, Exhaust gases, Silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-13401DOI: 10.1016/S0925-4005(03)00227-2OAI: oai:DiVA.org:liu-13401DiVA: diva2:20672