The speed of response of MISiCFET devices
2003 (English)In: Sensors and Actuators B: Chemical, ISSN 0925-4005, Vol. 93, no 1-3, 286-294 p.Article in journal (Refereed) Published
The metal oxide silicon carbide field effect transistor (MISiCFET) sensor has several possible car engine applications, such as an ammonia sensor in selective catalytic reduction (SCR) systems or as a lambda-sensitive device for enhancing catalytic converter efficiency. Both these applications involve closed loop control of the engine and thereby require fast sensors, that is why it is important to investigate the speed of response of the devices. The sensor consists of a SiC-based MOSFET device with a buried channel design and a catalytic gate metal, which makes it sensitive to a wide range of different gases. The selectivity and sensitivity of the sensor to a specific gas depends mainly on the choice of gate metal, its structure and the operating temperature. In this presentation, the speed of response of MISiCFET devices with many different gate metals at several operating temperatures are compared. The tests have been performed in the laboratory using the moving gas outlet (MGO) equipment. The equipment allows two gas outlets to move back and forth under the sensor, which makes it possible to change the atmosphere surrounding the sensor from synthetic air to the test gas quickly. The method is verified by changing the temperature of the device and frequency of the moving gas outlets. The test gas is either ammonia or hydrogen. The time constant of the sensors is shown to be very small; <100 ms when exposing a 25 nm porous Pt sensor to ammonia at 300 °C and <10 ms for a 10 nm TaSix 100 nm Pt device exposed to hydrogen. The temperature is found to have a large influence on the speed of response. The results show that the speed of response is well beyond the current requirements for use in both SCR and lambda control systems, respectively.
Place, publisher, year, edition, pages
2003. Vol. 93, no 1-3, 286-294 p.
Response time, Chemical sensor, Field effect device, Exhaust, Silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-13402DOI: 10.1016/S0925-4005(03)00228-4OAI: oai:DiVA.org:liu-13402DiVA: diva2:20673