Electronic structure of H/Ge(111)1x1 studied by angle-resolved photoelectron spectroscopy
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The electronic structure of H/Ge(111)1x1 was investigated using angleresolved photoelectron spectroscopy (ARPES). Spectra were measured along the high symmetry lines of the 1x1 surface Brillouin zone (SBZ). In the Γ − Κ −M direction, two surface states, labelled a and a’, were found in the lower and upper band gap pockets. The a and a’ surface states are associated with the Ge-H bonds and the Ge- Ge backbonds, respectively. In the Γ − Μ direction, only the Ge-H surface state, a, can be identified. It is found in the band gap pocket around the Μ -point. The two hydrogen induced surface states on H/Ge(111)1x1 show strong similarities with the corresponding surface states on H/Si(111)1x1. Results from H/Ge(111)1x1 and H/Si(111)1x1 are compared in the paper.
IdentifiersURN: urn:nbn:se:liu:diva-17369OAI: oai:DiVA.org:liu-17369DiVA: diva2:208846