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Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors
Carnegie Mellon University.
Carnegie Mellon University.
ASRC Aerospace Corporation.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics . Linköping University, The Institute of Technology.
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2009 (English)In: Journal of Electronic Materials, ISSN 0361-5235, Vol. 38, no 4, 569-573 p.Article in journal (Refereed) Published
Abstract [en]

We investigated the thermal stability of Pt/TaSi (x) /Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The contacts remained ohmic on lightly doped n-type (similar to 1 x 10(16) cm(-3)) 4H-SiC for over 1000 h in air at 300A degrees C. Although a gradual increase in specific contact resistance from 3.4 x 10(-4) Omega cm(2) to 2.80 x 10(-3) Omega cm(2) was observed, the values appeared to stabilize after similar to 800 h of heating in air at 300A degrees C. The contacts heated at 500A degrees C and 600A degrees C, however, showed larger increases in specific contact resistance followed by nonohmic behavior after 240 h and 36 h, respectively. Concentration profiles from Auger electron spectroscopy and electron energy-loss spectroscopy show that loss of ohmic behavior occurs when the entire tantalum silicide layer has oxidized.

Place, publisher, year, edition, pages
2009. Vol. 38, no 4, 569-573 p.
Keyword [en]
Ohmic contacts, nickel contacts, semiconductor contacts, SiC contacts, degradation mechanism, stability, reliability
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-17378DOI: 10.1007/s11664-008-0609-yOAI: diva2:208920
Available from: 2009-03-21 Created: 2009-03-21 Last updated: 2016-08-31

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Buchholt, KristinaHultman, LarsLloyd-Spets , Anita
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